The buffer layer will not show the intrinsic electronic structure of graphene but induces sizeable n-doping in the overlying monolayer graphene movie.[17] Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that creates wafer-scale, solitary-orientation graphene on an insulating substrate. It is frequently generally known as epigraphene, https://www.facebook.com/permalink.php?story_fbid=pfbid0NNw1bv5aZgz2gP6Xexzvnd1Ao5UWCkERH9EPmqcWDoBnCk5qru6EFBWo3EUbjCCil&id=61560512640678&__cft__[0]=AZWxI5LIql3MAvWUwgUm3NibpdMQJ2-VT-LrNE8PAqwOKuUbRHcZkH9mnA5n4t4xL8_oIRPetX8TC_XJ2pq2OAUX0kTu-VLWG3Vh2gHNgL_DI96-3l_XBo6Rtj9Z_OsRE8kWP1QUBeO5n4FVfjYrm5C4rKZJLTFyUyZAQXwOH8RDxe08YGg-MDqH-3SGZlU2zfJVydU0g266ApuBpflQtfLO&__tn__=%2CO%2CP-R